Ultrafast charge carrier dynamics in semiconductoring materials ultimately determine the performance of photoconductive terahertz (THz) emitters and receivers. Ion implantation of III-V semiconductors allows carrier dynamics to be tailored for a particular application, and thus the technique is increasingly being applied to the development of advanced materials for terahertz photonics. In this talk I will briefly introduce the technique of ion implantation and review some recent applications in THz photonics. I will then present time resolved conductivity studies of GaAs:As+, InGaAs:Fe+, InP:O+ and InP:Fe+ and relate these results to improved terahertz emitter and detector performance.


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    Titel :

    THz Emitters and Detectors Based on Ion Implanted III-V Semiconductors


    Beteiligte:
    Lloyd-Hughes, J. (Autor:in) / Fu, L. (Autor:in) / Castro-Camus, E. (Autor:in) / Merchant, S. (Autor:in) / Tan, H. H. (Autor:in) / Jagadish, C. (Autor:in) / Johnston, M. B. (Autor:in)


    Erscheinungsdatum :

    01.09.2006


    Format / Umfang :

    1311194 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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