Summary form only given. This paper reports the growth, fabrication, and characterization of the first solid source molecular beam epitaxially (SSMBE)-grown visible resonant cavity LED's. The epitaxial layers were grown by SSMBE on (100) Si-doped GaAs (2-inch) wafers.


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    Titel :

    Oxide-confined AlGaInP/AlGaAs visible resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy


    Beteiligte:
    Jalonen, M. (Autor:in) / Toivonen, M. (Autor:in) / Kongas, J. (Autor:in) / Savolainen, P. (Autor:in) / Salokatve, A. (Autor:in) / Pessa, M. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    143239 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Oxide-confined AlGaInP/AlGaAs Visible Resonant Cavity Light-emitting Diodes Grown by Solid Source Molecular Beam Epitaxy

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1997



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