Summary form only given. This paper reports the growth, fabrication, and characterization of the first solid source molecular beam epitaxially (SSMBE)-grown visible resonant cavity LED's. The epitaxial layers were grown by SSMBE on (100) Si-doped GaAs (2-inch) wafers.
Oxide-confined AlGaInP/AlGaAs visible resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy
01.01.1997
143239 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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