It is confirmed that the efficient light emits at the Si bandgap energy in the MOS tunneling diode structure. But its external quantum efficiency only about /spl sim/10/sup -5/. We make the surface roughness in the anisotropic dissolution of Si(100) in aqueous KOH. Such surface roughness enhance phonon-assisted radiative recombination. By KOH etching, the external quantum efficiency arrived at /spl sim/10/sup -4/.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Enhancing light-emission efficiency from Si-MOS tunneling diodes by KOH wet etching


    Beteiligte:
    Wu-Ping Huang, (Autor:in) / Ching-Fuh Lin, (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    92348 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Enhancing light-emission efficiency from Si-MOS tunneling diodes by KOH wet etching

    Huang, W.-P. / Lin, C.-F. / Guo li Taiwan da xue et al. | British Library Conference Proceedings | 2003


    High-efficiency tunneling-regenerated multi-active-region light-emitting diodes [4078-25]

    Guo, X. / Shen, G. / Wang, G. et al. | British Library Conference Proceedings | 2000


    Using SiO~2 Nanoparticles to Efficiently Enhance Light Emission from Metal-Oxide-Silicon Tunneling Diodes on Si

    Lin, C.-F. / Huang, W.-P. / Liang, E.-Z. et al. | British Library Conference Proceedings | 2002


    Light emission via inelastic tunneling

    Lambe, J. / McCarthy, S.L. | Tema Archiv | 1979


    Light Emission Via Inelastic Tunneling

    Lambe, John / McCarthy, S. L. | SAE Technical Papers | 1979