It is confirmed that the efficient light emits at the Si bandgap energy in the MOS tunneling diode structure. But its external quantum efficiency only about /spl sim/10/sup -5/. We make the surface roughness in the anisotropic dissolution of Si(100) in aqueous KOH. Such surface roughness enhance phonon-assisted radiative recombination. By KOH etching, the external quantum efficiency arrived at /spl sim/10/sup -4/.
Enhancing light-emission efficiency from Si-MOS tunneling diodes by KOH wet etching
01.01.2003
92348 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Enhancing light-emission efficiency from Si-MOS tunneling diodes by KOH wet etching
British Library Conference Proceedings | 2003
|High-efficiency tunneling-regenerated multi-active-region light-emitting diodes [4078-25]
British Library Conference Proceedings | 2000
|British Library Conference Proceedings | 2002
|Light emission via inelastic tunneling
Tema Archiv | 1979
|Light Emission Via Inelastic Tunneling
SAE Technical Papers | 1979
|