The temperature dependant electrical properties of InSbN alloys fabricated by directly nitrogen ion implanted into InSb substrate are investigated using Hall Effect Measurement. Intrinsic behavior is observed in the high temperature range (180-300K). Higher nitrogen doping level and annealing temperature will result in lower electron carrier concentration. Phonon scattering dominates.


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    Titel :

    The temperature dependence of electrical properties in N-doped InSb


    Beteiligte:
    Wang, Y. (Autor:in) / Zhang, D. H. (Autor:in) / Liu, W. (Autor:in)


    Erscheinungsdatum :

    01.12.2008


    Format / Umfang :

    182453 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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