Vanadium dioxide films doped tantalum and tungsten were deposited on SiO2/Si substrate by modified Ion Beam Enhanced Deposition (IBED) method. The doped polycrystalline VO2 films have single (002) orientation. The phase transition temperature was 28 °C and 42 °C for W and Ta doping respectively. The TCR was -3.4%/K and -10.14%/K at 300K for V0.97W0.03O2 and V0.97Ta0.03O2 respectively. Experimental results shown the crystal lattice constant d was elongated about 0.34% and 0.24%, phase transition hysteresis was 2.1 °C and 1.2 °C, the resistivity change magnitude was 1.6 and 1.2 for W-and W-and W-and Ta-doped IBED VO2 films respectively.


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    Titel :

    Property comparison between tantalum and tungsten doped polycrystalline VO2 thin films


    Beteiligte:
    Jinhua, Li (Autor:in) / Daohua, Zhang (Autor:in) / yan, Wang (Autor:in) / Meng, Zhao (Autor:in) / Weifeng, Zheng (Autor:in) / Ningyi, Yuan (Autor:in)


    Erscheinungsdatum :

    01.12.2008


    Format / Umfang :

    252727 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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