This paper reports the observations of drift in resistive states of HfO2-based Resistive Random Access Memory devices under continuous and read hammer operations. We provide possible explanations and analysis of the drift from the original state for both high and low resistance states. This work will provide a solid foundation for understanding the device performance over relatively long periods of time and under various operating conditions.
Study of Drift in RRAM Devices Under Various Operating Conditions
16.08.2021
2612287 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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