InGaAsN/GaAs wafers were grown by molecular beam epitaxy. Rapid thermal annealing of the wafers and photoluminescence measurements were performed. Ridge waveguide lasers with pulsed anodic oxides as the current-blocking layer were fabricated and characterized.


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    Titel :

    InGaAsN/GaAs lasers fabricated with pulsed anodic oxides


    Beteiligte:
    Chongyang Liu, (Autor:in) / Wah, R.T.J. (Autor:in) / Shu Yuan, (Autor:in) / Wang, S.Z. (Autor:in) / Yoon, S.F. (Autor:in)


    Erscheinungsdatum :

    01.01.2003


    Format / Umfang :

    26980 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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