InGaAsN/GaAs wafers were grown by molecular beam epitaxy. Rapid thermal annealing of the wafers and photoluminescence measurements were performed. Ridge waveguide lasers with pulsed anodic oxides as the current-blocking layer were fabricated and characterized.
InGaAsN/GaAs lasers fabricated with pulsed anodic oxides
01.01.2003
26980 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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