This study demonstrates that micro-masking in Cl/sub 2/-CH/sub 4/-H/sub 2/ ICP etching of semi-insulating InP is attributed to an excessive heating of the sample in conjunction with the use of methane. On the other hand, this work also shows that micro-masking of n-InP in Cl/sub 2/-Ar-H/sub 2/ ICP etching is due to the slow desorption of InCl/sub 3/.


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    Titel :

    Role of temperature and gas-chemistry in micro-masking of InP by ICP etching


    Beteiligte:
    Karouta, F. (Autor:in) / Docter, B. (Autor:in) / Geluk, E.J. (Autor:in) / Sander-Jochem, M.J.H. (Autor:in) / van der Tol, J.J.G.M. (Autor:in) / Smit, M.K. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    454340 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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