This study demonstrates that micro-masking in Cl/sub 2/-CH/sub 4/-H/sub 2/ ICP etching of semi-insulating InP is attributed to an excessive heating of the sample in conjunction with the use of methane. On the other hand, this work also shows that micro-masking of n-InP in Cl/sub 2/-Ar-H/sub 2/ ICP etching is due to the slow desorption of InCl/sub 3/.
Role of temperature and gas-chemistry in micro-masking of InP by ICP etching
2005-01-01
454340 byte
Conference paper
Electronic Resource
English
Role of Temperature and Gas-Chemistry in Micro-Masking of InP by ICP Etching
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