This study demonstrates that micro-masking in Cl/sub 2/-CH/sub 4/-H/sub 2/ ICP etching of semi-insulating InP is attributed to an excessive heating of the sample in conjunction with the use of methane. On the other hand, this work also shows that micro-masking of n-InP in Cl/sub 2/-Ar-H/sub 2/ ICP etching is due to the slow desorption of InCl/sub 3/.


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    Title :

    Role of temperature and gas-chemistry in micro-masking of InP by ICP etching


    Contributors:


    Publication date :

    2005-01-01


    Size :

    454340 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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