We adapt a model proposed by Yariv to analyze the two recording procedures via the kinetics of the recording, fixing, and developing processes under either short circuit or preexposed open-circuit boundary condition. From the analysis, we deduce the optimal condition (in terms of the fixing temperature and the compensation time) for each procedure. The results provide useful guides to design thermal fixing procedures for reaching the maximum fixing efficiency.


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    Titel :

    Thermal fixing of volume holograms in Fe:LiNbO/sub 3/ crystals


    Beteiligte:
    Shiuan Huei Lin, (Autor:in) / Mei Li Hsieh, (Autor:in) / Chao Ray Hsieh, (Autor:in) / Tai Chiung Hsieh, (Autor:in) / Hsu, K.Y. (Autor:in) / Chiou, A. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    201500 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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