Summary form only given. So far 1.3 /spl mu/m AlGaInAs-InP strained MQW lasers have achieved high characteristic temperature T/sub 0/ of 120 K and high operating temperature of 185 C. In this paper, we evaluated temperature dependence of the gain characteristics in AlGaInAs-InP lasers, and found that the high T/sub 0/ was caused by the smaller temperature dependence of the spontaneous emission efficiency than that of GaInAsP-InP lasers.


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    Titel :

    Temperature dependence of gain characteristics in 1.3-/spl mu/m AlGaInAs/InP compressively strained multiple quantum well semiconductor lasers


    Beteiligte:
    Higashi, T. (Autor:in) / Fujii, T. (Autor:in) / Yamamoto, T. (Autor:in) / Ogita, S. (Autor:in) / Kobayashi, M. (Autor:in)


    Erscheinungsdatum :

    01.01.1997


    Format / Umfang :

    167253 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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