Lasers with tensely strained GaAsP SQW were grown by MOVPE. P-up mounted devices achieved a cw output of nearly 7 W at 15/spl deg/C and >1.5 W at 85/spl deg/C heat sink temperature (aperture 100 /spl mu/m). Degradation rates of 1.2 10/sup -5//h@1 W, 25/spl deg/C have been obtained.


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    Titel :

    Highly reliable tensile strained 810 nm QW laser diode operating at high temperatures


    Beteiligte:
    Pittroff, W. (Autor:in) / Bugge, F. (Autor:in) / Erbert, G. (Autor:in) / Knauer, A. (Autor:in) / Maege, J. (Autor:in) / Sebastian, J. (Autor:in) / Staske, R. (Autor:in) / Thies, A. (Autor:in) / Wenzel, H. (Autor:in) / Traenkle, G. (Autor:in)


    Erscheinungsdatum :

    01.01.1998


    Format / Umfang :

    146700 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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