Lasers with tensely strained GaAsP SQW were grown by MOVPE. P-up mounted devices achieved a cw output of nearly 7 W at 15/spl deg/C and >1.5 W at 85/spl deg/C heat sink temperature (aperture 100 /spl mu/m). Degradation rates of 1.2 10/sup -5//h@1 W, 25/spl deg/C have been obtained.
Highly reliable tensile strained 810 nm QW laser diode operating at high temperatures
01.01.1998
146700 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Highly Reliable Tensily Strained 810 nm Qw Laserdiode Operating at High Temperatures
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