We demonstrated, for the first time, long wavelength InGaAs/InGaAsP VCSELs with strain-compensated multiple quantum wells. Record low threshold pumping power and high T/sub o/ have been achieved. The exceedingly high optical gain and the capability of growing many wells relax the stringent requirement on mirror reflectivity making strain-compensated multiple quantum wells attractive for long wavelength VC-SELs.
Low threshold 1.59 /spl mu/m vertical-cavity surface-emitting lasers with strain-compensated multiple quantum wells
Proceedings of LEOS'94 ; 1 ; 252-253 vol.1
01.01.1994
173104 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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