In this paper, we have fabricated a resonant cavity enhanced (RCE) Ge-on-double-silicon on insulator (SOI) photodetector for operation around the 1550 nm communication wavelength. The enhanced response of this detector is attributed to both the resonant cavity effect as well as the strain induced band gap narrowing of the Ge layer.
Germanium on double-SOI photodetectors for 1550 nm operation
01.01.2003
154520 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Germanium on Double-SOI Photodetectors for 1550 nm Operation
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