The coincidence of surface plasmon energy on silver and the GaN bandgap is exploited to couple the semiconductor spontaneous emission into the metal surface plasmons. External efficiency of LEDs could be improved by this process.


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    Titel :

    Coupling of InGaN quantum well photoluminescence to silver surface plasmons


    Beteiligte:
    Gontijo, I. (Autor:in) / Boroditsky, M. (Autor:in) / Yablonovitch, E. (Autor:in) / Keller, S. (Autor:in) / Mishra, U.K. (Autor:in) / Den Baars, S.P. (Autor:in) / Krames, M. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    161844 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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