This paper uniquely investigates the impact of SiC MOSFET aging on common-mode (CM) electromagnetic interference (EMI) emissions. SiC MOSFETs have been widely used in high-frequency and high-power applications. However, its aging could permanently change its attractive characteristics and worsen EMI reliability. It could be critical in applications where power electronic devices are expected to operate for years of missions (e.g., 30 to 50 years of service in electric ships or aircraft). However, despite its significance, such EMI performance changes by aging have been limitedly studied until recently. To address new challenges, this paper has uniquely characterized the SiC MOSFET aging and its impact on CM EMI emissions. Specifically, SiC MOSFETs from different manufacturers have been comparatively studied. It is done following accelerated degradation testing standards of power semiconductor switches. Then, the changes at low and high-frequency EMI harmonics have been precisely characterized; it has been done in both time and frequency domains to identify its impact comprehensively. This new CM EMI characterization by converters degradation could be valuable, providing designers a unique insight to derive new system development strategies (i.e., EMI filter designs and other preventive measures) independently from system aging.


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    Titel :

    Investigation of SiC MOSFET Aging Effects on Common-Mode EMI Emissions


    Beteiligte:
    Mannan, Tahmid Ibne (Autor:in) / Amin, Ashik (Autor:in) / Choi, Seungdeog (Autor:in)


    Erscheinungsdatum :

    01.08.2023


    Format / Umfang :

    2127662 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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