Summary form only given. Semiconductor lasers with optical efficiencies >1 have been created by monolithically connecting several active regions in series within a single optical waveguide. This is accomplished by epitaxially stacking a multiple of pin-MQW active regions with intermediate n/sup ++/-p/sup ++/ back-diodes which enable the entire terminal current to flow through each active region in series.


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    Titel :

    Epitaxially-stacked multiple-active-region 1.55 /spl mu/m lasers for increased efficiency


    Beteiligte:
    Kim, J.K. (Autor:in) / Hall, E. (Autor:in) / Getty, J. (Autor:in) / Coldren, L.A. (Autor:in)


    Erscheinungsdatum :

    01.01.1999


    Format / Umfang :

    167229 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch





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