Improved mathematical model provides correction for flange effect in estimating resistance of square contact between two metal layers from standard four-terminal measurements. Extended version of one developed previously for contact between metal layer and semiconductor layer, wherein flange effect important in semiconductor layer only. Here flange effect in both metal layers significant. Interfacial resistances extracted more accurately.
Flange Correction For Metal-To-Metal Contacts
NASA Tech Briefs ; 15 , 5
01.05.1991
Sonstige
Keine Angabe
Englisch
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