Phototransistors of proposed new type used to detect photons having wavelengths of 8 to 150 micrometers. Detection based on impurity-to-continuum transitions. Integrated-circuit imaging arrays of such phototransistors useful in infrared remote sensing. Device of this type silicon, germanium, or silicon/germanium phototransistor in which junction between collector and base lightly doped with impurities.


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    Titel :

    Phototransistors For Long-Wavelength Infrared


    Beteiligte:

    Erschienen in:

    Erscheinungsdatum :

    01.05.1991



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch




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