The use of power MOS transistors in spacecraft and military equipment is limited by their vulnerability to ionizing radiation (total-dose and dose-rate). The total-dose hardness of four types of power MOS is examined in this paper. All devices experience comparable shifts of VGS(th) following total-dose exposure. Other functional parameters are not affected by dose up to half a megarad. Thus, an effective hardening technique consists of extending the range of gate bias and gate drive to allow operation at high dose levels. The results of dose-rate testing of three types of power MOS are presented and analyzed. Photocurrent burnouts are tentatively attributed to thermally induced second breakdown of the drain-source diode. Decreasing the carrier lifetime of the junction material is anticipated to decrease this vulnerability.


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    Titel :

    Radiation effects on MOS power transistors


    Weitere Titelangaben:

    Strahlungseinfluss auf MOS-Leistungstransistoren


    Beteiligte:
    Volmerange, H. (Autor:in) / Witteles, A.A. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1982


    Format / Umfang :

    4 Seiten, 6 Bilder, 2 Tabellen, 4 Quellen



    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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