Due to their limited sensitive volumes for charge collection, silicon-on-insulator (SOI) technologies are good candidates for any microelectronic device operating in a space environment. While being insensitive to latchup phenomena, SOI devices may experience single-event effects (SEEs). Based on the analysis of the various structures of SOI transistors, charge collection mechanisms are presented. The different models proposed to analyze the sensitivity of CMOS SRAM cells are then discussed. The available data of SEU characterizations are finally compiled.


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    Titel :

    Single-event effects in SOI technologies and devices


    Weitere Titelangaben:

    Einzelereigniseffekte in der SOI-Technik


    Beteiligte:
    Musseau, O. (Autor:in)

    Erschienen in:

    IEEE Transactions on Nuclear Science ; 43 , 2 Part I ; 603-613


    Erscheinungsdatum :

    1996


    Format / Umfang :

    11 Seiten, 16 Bilder, 2 Tabellen, 63 Quellen




    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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