1.55 /spl mu/m AlGaInAs multi-quantum-well lasers with varying quantum well strain and number of quantum wells are studied. Results show that high strain and more quantum wells lead to a high T/sub 0/ and high injection efficiency.
Temperature dependent performance of 1.55 /spl mu/m AlGaInAs laser diodes
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 1 ; 568-570 Vol. 1
01.01.2005
458431 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Temperature Dependent Performance of 1.55 mum AlGaInAs Laser Diodes
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