1.55 /spl mu/m AlGaInAs multi-quantum-well lasers with varying quantum well strain and number of quantum wells are studied. Results show that high strain and more quantum wells lead to a high T/sub 0/ and high injection efficiency.


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    Titel :

    Temperature dependent performance of 1.55 /spl mu/m AlGaInAs laser diodes


    Beteiligte:
    Yang, C. (Autor:in) / Stinz, A. (Autor:in) / Lester, L. (Autor:in) / Malloy, K.J. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    458431 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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