This paper summarizes the unique performance capabilities of high-power GaN high electron mobility transistor (HEMT) devices for possible integration in high power solid-state amplifiers capable of operating under severe thermal and mechanical environments. Optimum device parameters, higher bias levels, and higher cutoff frequencies are needed to achieve higher power densities at MM-wave frequencies. High power GaN-HEMTs have potential applications in third-generation mobile communications systems, auto-collision radars, and high power T/R modules used in long range missile defense radars.


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    Titel :

    High-power GaN-HEMT devices operating at MM-wave frequencies


    Beteiligte:
    Jha, A.R. (Autor:in)


    Erscheinungsdatum :

    01.01.2005


    Format / Umfang :

    298757 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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