We found that, by capping the samples with an InP wafer, a constant lateral oxidation rate of 6.3 /spl mu/m/hr could be achieved at 530 C for InAlAs, and surface morphology could be improved. In addition, Auger electron spectroscopy (AES) showed that nearly all arsenic and some indium in the InAIAs layer had diffused out during the oxidation. We show the schematic of the samples for the experiment, which was initially designed for wafer-bonded VCSELs.
Improved lateral wet-oxidation of In/sub 0.52/Al/sub 0.48/As
01.01.1998
185947 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
British Library Online Contents | 2001
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