Subsurface inspection of a Si integrated circuit (IC) by a Numerical Aperture Increasing Lens (NAIL) microscope has yielded a lateral spatial resolution of better than 0.23 /spl mu/m. We compare NAIL microscopy to standard subsurface microscopy using the Hamamatsu /spl mu/AMOS-200, IC Failure Analysis System. The NAIL improves the microscope's lateral spatial resolution from /spl sim/1.7 /spl mu/m to /spl sim/0.3 /spl mu/m. It is difficult to obtain the longitudinal spatial resolution because the sample has multiple longitudinal dielectric interfaces.
Comparison of numerical aperture increasing lens and standard subsurface microscopy
01.01.2001
387221 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
ThN5 Comparison of Numerical Aperture Increasing Lens and Standard Subsurface Microscopy
British Library Conference Proceedings | 2001
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